Patent · US Active

Planarization strategy in nano-sized fabrication

US12254906B1 · kind B1 · utility

0Cited by
9References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 24, 2022
Grant dateMar 18, 2025
Priority date
Expiry dateJun 16, 2043

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB24B37/042
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A method of planarizing a device having a surface topography with at least one material at a surface of the device is described. The method comprises the steps of depositing a stop layer over at least a portion of the at least one material which substantially retains the surface topography of the device. A sacrificial layer is deposited over at least a portion of the stop layer. A planarization process is performed on the device. The planarization process includes the steps of performing a chemical mechanical polish (CMP) on the top surface of the sacrificial layer. A physical removal step is conducted on the remainder portion of the sacrificial layer to form a planarized surface. A second CMP step and a second physical removal step are conducted, to form a planarized device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.