Sense amplifier circuit architecture
US12254921B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2023 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Jun 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier circuit architecture includes a first NMOS layout, a second NMOS layout, a first PMOS layout, a second PMOS layout, a first processing structure layout and a second processing structure layout. The first NMOS layout includes first N-type active layers and first gate layers discretely arranged on the first N-type active layers. The second NMOS layout includes second N-type active layers and second gate layers discretely arranged on the second N-type active layers. The first PMOS layout includes first P-type active layers and third gate layers discretely arranged on the first P-type active layers. The second PMOS layout includes second P-type active layers and fourth gate layers discretely arranged on the second P-type active layers. The first processing structure layout includes first active layers and a first isolation gate. The second processing structure layout includes second active layers and a second isolation gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.