Method for producing non-contiguous metal oxide semiconductors, of uniform and controlled size and density
US12255066B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 26, 2020 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Apr 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing nanostructures having a metal oxide shell, carried by a top face of a substrate whose greatest dimension is greater than or equal to 100 mm by MOCVD metalorganic chemical vapour deposition, including successive steps carried out in a reactor configured for MOCVD deposition of nucleation and growth. The nucleation step includes forming non-contiguous metal nuclei by depositing a metal by MOCVD using a metalorganic precursor on the top face of the substrate and oxidising the metal of the metal nuclei, to form oxidised nuclei and ensure stabilisation of the nuclei. The growth step includes depositing a metal by MOCVD using the metalorganic precursor, to form non-contiguous nanostructures by growth of the oxidised nanostructures, and oxidising the deposited metal of the nanostructures formed in the nucleation to form oxidised nanostructures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.