Methods of forming fin-on-nanosheet transistor stacks
US12255099B2 · kind B2 · utility
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7References
19Claims
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Key dates
| Filing date | Feb 2, 2022 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Jul 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/43
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a plurality of transistor stacks are provided. A method of forming a plurality of transistor stacks includes etching a plurality of nanosheets, using a plurality of spacers that are on sidewalls of a plurality of semiconductor fins as an etch mask, to provide a plurality of spaced-apart nanosheet stacks that each have at least one of the semiconductor fins thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.