Patent · US Active

Nanowire-based interconnects for sub-millimeter wave integrated circuit applications

US12255108B2 · kind B2 · utility

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20Claims
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Key dates

Filing dateJun 17, 2022
Grant dateMar 18, 2025
Priority date
Expiry dateMay 12, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2221/1078
  • WIPO fieldTelecommunications
  • WIPO sectorElectrical engineering

Abstract

A device includes a substrate and at least one electrically conducting portion supported by the substrate, the at least one electrically conducting portion including a signal line and a ground plane electrically isolated from the signal line. The electrically conducting portion includes a layer of a first electrically conducting material and a layer of a metal oxide material including anodic aluminum oxide (AAO) and one or more nanowires (NW) of a second electrically conducting material each formed within a corresponding pore extending through the AAO from a first side of the layer to a second side of the layer of the metal oxide material opposite the first side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.