Airgap structures for high speed signal integrity

US12255130B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Hongxia Feng · Chandler, US
• Jeremy Ecton · Gilbert, US
• Aleksandar Aleksov · Chandler, US
• Haobo Chen · Chandler, US
• Xiaoying Guo · Phoenix, US
• Brandon C. Marin · Chandler, US
• Zhiguo Qian · Chandler, US
• Daryl Purcell · Chandler, US
• Leonel Arana · Phoenix, US
• Matthew Tingey · Hillsboro, US

Key dates

• Filing date: May 27, 2020
• Grant date: Mar 18, 2025
• Expiry date: Dec 24, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53295
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.