Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US12255228B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 23, 2022 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Apr 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes, on a front surface of a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a first semiconductor region of the first conductivity type selectively provided on a first side of the third semiconductor layer opposite to a second side thereof facing the silicon carbide semiconductor substrate, second semiconductor regions of the second conductivity type that have an impurity concentration higher than that of the second semiconductor layer, trenches, gate electrodes provided via gate insulating films, an interlayer insulating film, a first electrode, and a second electrode. The first semiconductor region is thinner than a portion of the third semiconductor layer between the first semiconductor region and the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.