Nanowire array, optoelectronic device and preparation method thereof
US12255231B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jan 11, 2019 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Aug 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.