Semiconductor device including backside contact structure having positive slope and method of forming thereof
US12255248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2023 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Dec 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76805
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and a method are disclosed for forming a bottle-neck shaped backside contact structure in a semiconductor device, wherein the bottle-neck shaped backside contact structure has a first side partially within the first source/drain structure, a second side contacting a backside power rail, and a liner extending from the first side to the backside power rail. The liner includes a first region comprised of either a Ta silicide liner or a Ti silicide liner, a second region comprised of a Ti/TiN liner and a third region comprised of either a Ta silicide liner or a Ti silicide liner. The backside contact structure includes a first portion having a positive slope and a second portion, adjacent to the first portion, having no slope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.