Enhanced room temperature mid-IR LEDs with integrated semiconductor ‘metals’

US12255264B2 · kind B2 · utility

Assignee

• The Board of Regents of the University of Texas System · US

Inventors

• Daniel Wasserman · Lowell, US
• Seth Bank · Austin, US
• Andrew Briggs · Felton, GB
• Leland Nordin · Austin, US

Key dates

• Filing date: Jun 25, 2021
• Grant date: Mar 18, 2025
• Expiry date: Jul 8, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

Mid-IR light emitting diodes (LEDs) based on type-II quantum dot (QD) active regions grown with monolithically integrated semiconductor metal layers are provided. These LEDs comprise layers of type-II semiconductor (e.g., InGaSb) quantum dots integrated into a pn junction diode (e.g., InAs) grown above a highly doped backplane, such as an n++ InAs backplane, all in the same epitaxial growth. Aspects described herein minimize non-radiate recombination times and significantly increase radiative recombination rates by controlling the emission of the emitting QDs in the near field of an optical metal.