Laser device with non-absorbing mirror, and method
US12255434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2023 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Oct 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser device with one or more active regions, such as quantum wells, gain/lighting media, or other devices, and one or more non-absorbing regions, may be formed by a first growth run (growing a first semiconductor layer), then performing selective, shallow-depth etching, and then a second growth run (growing a second semiconductor layer). The laser device may include a first portion, one or more active regions located on the first portion, and a second portion located on the active region(s). A third portion may be located on one or more ends of the first portion and on the second portion. The third portion may be formed during the second growth run, after the etching step. The non-absorbing region(s) may be formed by the third portion and the end(s) of the first portion. If desired, the non-absorbing region(s) may be produced without annealing or locally-induced quantum well intermixing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.