Semiconductor devices and data storage systems including the same
US12256545B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 11, 2022 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Sep 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
A semiconductor device includes a semiconductor structure that includes a substrate having a first region and a second region, gate electrodes stacked and spaced apart from each other in a first direction, extend at different lengths in a second direction on the second region, and include pad regions, interlayer insulating layers alternately stacked with the gate electrodes, channel structures penetrating the gate electrodes, extending in the first direction, and each including a channel layer, contact plugs penetrating the pad regions and extending in the first direction on the second region, and contact insulating layers between the gate electrodes and between ones of the contact plugs below the pad regions. The pad regions and the contact insulating layers protrude from the interlayer insulating layers toward the contact plugs in a horizontal direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.