Silicon carbide MOSFET device and cell structure thereof
US12256569B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 25, 2019 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Mar 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cell structure of a silicon carbide MOSFET device, comprising a first conductivity type drift region (3) located above a first conductivity type substrate (2). A main trench is provided in the surface of the first conductivity type drift region (3); a Schottky metal (4) is provided on the bottom and sidewalls of the main trench; a second conductivity type well region (7) is provided in the surface of the first conductivity type drift region (3) and around the main trench; a source region (8) is provided in the surface of the well region (7); a source metal (10) is provided above the source region (8); a gate insulating layer (6) and a gate (5) split into two parts are provided above the sides of the source region (8), the well region (7), and the first conductivity type drift region (3) close to the main trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.