Gallium nitride single crystal substrate
US12258678B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2024 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Mar 28, 2044 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB32B3/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a gallium nitride single crystal substrate, which is a gallium nitride single crystal substrate that has a diameter of 50 mm or more and whose low index crystal plane closest to a main surface is a (0001) plane, wherein a density of etch pits when applying etching to the main surface with an alkaline etching solution is less than 1×106 cm−2, and among peaks appearing in a histogram of diameters of the etch pits, when a diameter of a first peak appearing on a smallest diameter-side is a, a total number of the etch pits with a diameter exceeding 4a is 1/1000 or less of a number of etch pits forming the first peak.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.