Substrate stripping method and epitaxial wafer
US12261040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2020 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Oct 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02642
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate stripping method and an epitaxial wafer, relating to the technical field of semiconductors. The method comprises: providing a substrate (1), the substrate (1) having a recess, and the recess being distributed on a first surface (1a) of the substrate (1); forming a hydrophilic layer (3) in the recess; forming, on the first surface (1a), an etching sacrificial layer (4) covering the first surface (1a), the etching sacrificial layer (4) and the recess defining a flowing space (A); growing an epitaxial layer (5) on the etching sacrificial layer (4); and soaking the etching sacrificial layer (4) and the substrate (1) in an etching liquid, and corroding the etching sacrificial layer (4) by means of the etching liquid until the epitaxial layer (5) is separated from the substrate (1). The method can rapidly and uniformly etch the etching sacrificial layer (4).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.