Semiconductor device and manufacturing method of semiconductor device
US12261058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2021 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | May 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device, including a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction is flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface except for a portion where a local hydrogen concentration peak is provided; and a donor concentration of the semiconductor substrate is higher than a bulk donor concentration over an entire region from the upper surface to the lower surface. Hydrogen ions may be irradiated from the upper surface or the lower surface of the semiconductor substrate so as to penetrate the semiconductor substrate in the depth direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.