Patent · US Active

Optoelectronic device manufacturing method

US12261161B2 · kind B2 · utility

0Cited by

7References

18Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

François Templier · Grenoble, FR
Sébastien Becker · Voiron, FR

Key dates

Filing date	May 11, 2022
Grant date	Mar 25, 2025
Priority date	—
Expiry date	Jun 15, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10H29/142
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) arranging an active light-emitting diode stack on a second substrate; c) after steps a) and b), transferring the active photosensitive diode stack onto the active light-emitting diode stack, and then removing the first substrate; and d) after step c), transferring the assembly comprising the active photosensitive diode stack and the active light-emitting diode stack onto an integrated control circuit previously formed inside and on top of a third substrate, and then removing the second substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.