Method for preparing interlayer insulating layer and method for manufacturing thin film transistor, thin film transistor
US12261179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2022 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Dec 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.