Oxide thin film transistor, method for preparing same, and display apparatus

US12261225B2 · kind B2 · utility

Assignees

• Fuzhou BOE Optoelectronics Technology Co., Ltd. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Bin Lin · Beijing, CN
• Zengrong Li · Lo Wu, CN
• Hangle Guo · Beijing, CN
• Zhenyou Zou · Beijing, CN
• Liangliang Li · Beijing, CN
• Fadian Le · Beijing, CN

Key dates

• Filing date: Dec 1, 2020
• Grant date: Mar 25, 2025
• Expiry date: Dec 1, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/40

Abstract

Provided is an oxide thin film transistor, including a gate, a gate insulator, a channel layer, a protective layer, and a source electrode and drain electrode layer that are disposed on a base substrate, wherein the source electrode and drain electrode layer includes a source electrode and a drain electrode that are spaced; and the protective layer is disposed between the channel layer and the source electrode and drain electrode layer, and is in contact with both the source electrode and drain electrode layer and the channel layer; an orthographic projection of the protective layer on the base substrate covers an orthographic projection of the channel layer on the base substrate; and the protective layer includes a first portion, a second portion, and a third portion that are in different areas of the protective layer.