Method for fabricating semiconductor structure, semiconductor structure, and memory

US12262522B2 · kind B2 · utility

Assignee

• CHANGXIN MEMORY TECHNOLOGIES, INC. · CN

Inventors

• Shuai Guo · Beijing, CN
• Mingguang Zuo · Hefei, CN

Key dates

• Filing date: Jun 16, 2022
• Grant date: Mar 25, 2025
• Expiry date: Aug 10, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/01

Abstract

Embodiments provide method for fabricating a semiconductor structure, and a semiconductor structure. The method includes: providing a substrate, a thin-film stack structure being formed on the substrate; forming a first groove and a second groove in the thin-film stack structure, and forming write transistors in the first groove, the second groove extending along a first direction, and the second groove being positioned between adjacent two of the write transistors in a second direction; removing a part of the thin-film stack structure by etching using the second groove to form a first hole and a second hole respectively, forming a write word line in the first hole, and forming a write bit line in the second hole; forming a first via on an upper surface of the thin-film stack structure, and forming a storage node in the first via; and forming a read transistor, a read bit line and a lead.