Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same
US12262560B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jan 29, 2024 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Jan 29, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.