Ruthenium compound, thin-film forming raw material, and method of producing thin film
US12264168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2020 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Nov 17, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where R1 to R12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and “n” represents an integer from 0 to 2, provided that at least one of R1 to R12 represents the fluorine atom-containing group; where R13 to R17 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of R13 to R17 is 3 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.