Chemical vapor infiltration densification method using single-pile plates for a semi-forced flow
US12264394B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 16, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Feb 16, 2043 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF16D2250/0092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for densifying porous annular substrates having a central passage by chemical vapor infiltration, the method including providing stacks of porous annular substrates, providing a plurality of individual modules including stacks disposed on a support plate having a perforated injection tube each mounted on a gas inlet opening, forming a stack of individual modules, aligning the individual modules of the stack in a sealed manner by means of an annular seal disposed between the injection tube of a second individual module and the gas inlet opening of a first individual module with which it cooperates, and injecting into the internal volume of each stack of porous annular substrates a gas phase including a gaseous precursor of a matrix material to be deposited within the porosities of the substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.