Radiation tolerant bandgap reference
US12265409B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 30, 2022 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Jun 22, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/30
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
Systems, apparatuses, and methods that compensate for total ionizing doses and intrinsic base currents in transistors of a bandgap reference circuit are provided. A compensation circuit can include a compensation transistor with a size and one or more bias conditions that are based at least in part on a respective bipolar transistor of a bandgap reference circuit. The compensation circuit can include an operational amplifier that is configured to: (i) set a base-collector voltage of the compensation transistor to zero; and (ii) provide a compensation base current to a base terminal of the compensation transistor that is representative of at least a radiation-induced current transistor or an intrinsic base current for the respective bipolar transistor. A bandgap reference circuit can be augmented with one or more compensation circuits to accommodate for a total ionizing dose and/or an intrinsic base current for one or more transistors of the bandgap reference circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.