Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatus
US12266530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Dec 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of an anchorage element of a passivation layer, comprising: forming, in a semiconductor body made of SiC and at a distance from a top surface of the semiconductor body, a first implanted region having, along a first axis, a first maximum dimension; forming, in the semiconductor body, a second implanted region, which is superimposed to the first implanted region and has, along the first axis, a second maximum dimension smaller than the first maximum dimension; carrying out a process of thermal oxidation of the first implanted region and second implanted region to form an oxidized region; removing said oxidized region to form a cavity; and forming, on the top surface, the passivation layer protruding into the cavity to form said anchorage element fixing the passivation layer to the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.