Method of manufacturing silicon carbide semiconductor device
US12266531B2 · kind B2 · utility
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6References
10Claims
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Key dates
| Filing date | Feb 1, 2022 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Apr 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a silicon carbide semiconductor device according to the technology disclosed in the present specification includes: forming a drift layer on an upper surface of a silicon carbide semiconductor substrate; forming a hard mask on the upper surface of the drift layer by anisotropic etching; and forming a first ion-implanted region in a surface layer of the drift layer by implanting ions into the drift layer in a state in which the hard mask is formed, in which the hard mask includes a sidewall perpendicular to the upper surface of the drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.