Patent · US Active

Substrate bonding method

US12266623B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 28, 2022
Grant dateApr 1, 2025
Priority date
Expiry dateSep 19, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/20108
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A substrate bonding method includes: providing a first and a second substrate; forming, on the first substrate, a first metal micro-bump array including first metal pillar(s) formed on the first substrate and first metal nanowires formed thereon and spaced apart from each other; forming, on the second substrate, a second metal micro-bump array including second metal pillar(s) formed on the second substrate and second metal nanowires formed thereon and spaced apart from each other; pressing the first substrate onto the second substrate, such that the first and second metal micro-bump arrays are positioned and staggered with each other, forming a physically interwoven interlocking structure between the first and second metal nanowires; applying a filling material between the first and second substrates; curing the filling material to form a bonding cavity; and then performing confined heating reflux on the first and second metal micro-bump arrays in the bonding cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.