Semiconductor device
US12266652B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2022 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Jul 29, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. The recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.