Method and device for using a semiconductor component

US12266685B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Daniel Monteiro Diniz Reis · Esslingen am Neckar, DE
• Frank Schatz · Kornwestheim, DE
• Mathias Mews · Reutlingen, DE
• Timo Schary · Grötzingen, DE

Key dates

• Filing date: Dec 29, 2021
• Grant date: Apr 1, 2025
• Expiry date: Sep 23, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682

Abstract

Device and method for using a semiconductor component in which a dielectric layer is situated between a first electrode and a second electrode of the semiconductor component, defects of a first defect type being present in the dielectric layer. The method includes: operating the semiconductor component using a first voltage having a first polarity between the first electrode and the second electrode, determining whether or not a condition is met for switching over from operating the semiconductor component using the first voltage to operating the semiconductor component using a second voltage, which has a second polarity opposite the first polarity, continuing the operation of the semiconductor component using the first voltage if the condition is not met, and otherwise ending the operation of the semiconductor component using the first voltage, and operating the semiconductor component using the second voltage between the first electrode and the second electrode.