III-V semiconductor device with integrated power transistor and start-up circuit
US12266724B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2020 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Oct 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An Ill-nitride semiconductor based heterojunction power device is disclosed and includes a first and second heterojunction transistors formed on a substrate. The first and second heterojunction transistors include first and second Ill-nitride semiconductor regions formed over the substrate. The first Ill-nitride semiconductor region includes a first heterojunction, a first terminal connected to the first Ill-nitride semiconductor region, a second terminal laterally spaced from the first terminal and connected to the first Ill-nitride semiconductor region, and a first gate region over the first Ill-nitride semiconductor region between the first and second terminals. The second Ill-nitride semiconductor region includes a second heterojunction, a third terminal connected to the second Ill-nitride semiconductor region, a fourth terminal laterally spaced from the third terminal and connected to the second Ill-nitride semiconductor region, first highly doped semiconductor regions of a first conductivity type formed over the second Ill-nitride semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.