Patent · US Active

Photovoltaic cell, method for manufacturing same, and photovoltaic module

US12266731B2 · kind B2 · utility

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Key dates

Filing dateFeb 28, 2024
Grant dateApr 1, 2025
Priority date
Expiry dateFeb 28, 2044

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/547

Abstract

The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitride atoms in the at least one silicon oxynitride layer. The first silicon oxide layer is disposed between the substrate and the at least one aluminum oxide layer, and a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.