Photovoltaic cell, method for manufacturing same, and photovoltaic module
US12266731B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 28, 2024 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Feb 28, 2044 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitride atoms in the at least one silicon oxynitride layer. The first silicon oxide layer is disposed between the substrate and the at least one aluminum oxide layer, and a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.