Methods for growing doped cesium lead halides
US12266733B2 · kind B2 · utility
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3References
9Claims
0Family size
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Key dates
| Filing date | Jul 10, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Jul 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.