Infrared sensor and manufacturing method for the same
US12266734B2 · kind B2 · utility
0Cited by
2References
1Claims
0Family size
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Key dates
| Filing date | Sep 11, 2019 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Sep 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/60
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An object is to provide an infrared sensor with a quantum dot optimized. The present invention provides an infrared sensor (1) including a light absorption layer (5) that absorbs an infrared ray, wherein the light absorption layer includes a plurality of spherical quantum dots (21). Alternatively, the present invention provides an infrared sensor including a light absorption layer that absorbs an infrared ray, wherein the light absorption layer includes a plurality of quantum dots and the quantum dot includes at least one kind of PbS, PbSe, CdHgTe, Ag2S, Ag2Se, Ag2Te, AgInSe2, AgInTe2, CuInSe2, CuInTe2, and InAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.