Manufacturing method of metal mesh, thin film sensor and manufacturing method thereof
US12266851B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 23, 2021 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Apr 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/12
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a manufacturing method of a metal mesh, a thin film sensor and a manufacturing method of the thin film sensor, and belongs to the technical field of electronic devices. The manufacturing method of the metal mesh of the present disclosure includes: providing a base substrate; forming a pattern including a first epitaxial structure on the base substrate through a patterning process, wherein the first epitaxial structure has a first groove in a mesh shape; forming a first dielectric layer covering on a side of the first epitaxial structure away from the base substrate, so as to form a second groove in a mesh shape; and forming a metal material in the second groove on a side of the first dielectric layer away from the base substrate through a patterning process, so as to form a metal mesh.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.