High-resistance resistor based on silicon carbide and manufacturing method thereof

US12268013B2 · kind B2 · utility

Assignees

• Talyuan University of Technology · CN
• Institute of New Materials and Chemical Engineering, Zhejiang University, Shanxi · CN

Inventors

• Yuying Xi · Jinzhong City, CN
• Yanxia Cui · Shanxi, CN
• Kun Hu · Kunshan, CN
• Yuan Tian · Houston, US
• Guohui Li · Tangxia, CN
• Bingshe Xu · Taiyuan, CN

Key dates

• Filing date: Aug 11, 2022
• Grant date: Apr 1, 2025
• Expiry date: Dec 6, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a high-resistance resistor based on silicon carbide. The resistor includes a semi-insulating 4H—SiC silicon carbide substrate, a silicon surface and a carbon surface of the silicon carbide substrate are provided with symmetrical atomic-thickness aluminum oxide insulating layers, thicknesses of the aluminum oxide insulating layers are 0.2 nm-2 nm, conductive metal electrodes are formed at two sides of the aluminum oxide insulating layers through evaporation, and thicknesses of the metal electrodes are 100 nm-500 nm. The present disclosure uses a high-resistance resistor based on silicon carbide that has the above structure, makes an ohmic contact electrode on a semi-insulating silicon carbide substrate, thus obtaining a resistor with a resistance of 100 TΩ or more, and satisfying requirements of the precision measurement industry.