Composition for memory cell containing chalcogen compound, structure thereof, method for manufacturing same, and method for operating same
US12268104B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2020 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Mar 10, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a composition, a memory structure suitable for the composition, a manufacturing method, and an operating method for stable operation in a memory element including a chalcogen compound. In order to achieve the object, in a memory array with a cross-point structure including a first electrode line and a second electrode line intersecting each other, and a selective memory element disposed at each intersection of the first electrode line and the second electrode line and being a chalcogen compound, the present invention may provide the memory array with a cross-point structure including the first electrode line formed on a substrate, a first functional electrode formed between the first electrode line and the selective memory element, and a second functional electrode formed between the second electrode line and the selective memory element, wherein the first functional electrode is formed as a line along the first electrode line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.