Heterogeneous GaN lasers and active components
US12271033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Dec 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device comprises first, second, third and fourth elements fabricated on a common substrate. The first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure supporting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element comprising TCO material that is attached to the first element. If the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation. No adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode. Mutual alignments of the first, the second, the third, and the fourth elements are defined using lithographic alignment marks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.