Heterogeneous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platform
US12271068B2 · kind B2 · utility
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Key dates
| Filing date | Feb 24, 2023 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Feb 24, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/58
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.