Semiconductor topography simulation of non-removal type processes
US12272043B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 4, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Oct 23, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2219/2021
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for topography simulation of a physical structure under a topography-changing process. The method includes initializing a voxel mesh as a three-dimensional (3D) representation of the physical structure, generating a batch of particles, simulating a flight path of at least one of the particles with a ray-tracing method, identifying a voxel unit in the voxel mesh that intersects the flight path, determining a surface reaction between the one of the particles and the voxel unit, and adding an extra voxel unit adjacent to the voxel unit based on the determining of the surface reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.