Charge pump having switch circuits for blocking leakage current during sudden power-off, and flash memory including the same
US12272419B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2023 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Jun 30, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a charge pump of a flash memory, which includes a first stage pump that is connected between an output terminal and a first pump node, and a second stage pump that is connected between the first pump node and a second pump node. The first stage pump includes a first switch circuit that is connected between a power terminal and the first pump node and provides a power supply voltage to the first pump node in response to a first stage signal, in a normal operation, and a first pump circuit that generates a first pumping voltage by using a voltage of the first pump node in response to a first clock signal and provides the first pumping voltage to the output terminal. The first switch circuit blocks a current flow from the first pump node to the power terminal in a sudden power-off event.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.