Interposer and semiconductor package including same
US12272630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2023 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Jul 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interposer including a base layer, a redistribution structure on a first surface of the base layer and including a conductive redistribution pattern, a first lower protection layer on a second surface of the base layer, a lower conductive pad on the first lower protection layer, a through electrode connecting the conductive redistribution pattern and the lower conductive pad, a second lower protection layer on the first lower protection layer, including a different material than the first lower protection layer, and contacting at least a portion of the lower conductive pad, and an indentation formed in an outer edge region of the interposer to provide a continuous angled sidewall extending entirely through the second lower protection layer and through at least a portion of the first protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.