Semiconductor device
US12272695B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Jun 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/364
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device is provided that includes a base substrate, an insulating film on the base substrate, and an upper substrate on the insulating film. The insulating film includes a crystalline insulating material. A thickness of the insulating film is about 1 nm to about 1,000 nm, and a thickness of the upper substrate is about 1 nm to about 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.