Image sensor
US12272705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2021 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Dec 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.