Semiconductor apparatus and electronic equipment
US12272713B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 18, 2019 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Sep 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80896
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus and electronic equipment are provided that allow improvement of bondability between a first electrode section and a second electrode section. A semiconductor apparatus includes a first interconnect section, a first interlayer insulating film covering one surface side of the first interconnect section, a first electrode section in a first through-hole in the first interlayer insulating film and electrically connected to the first interconnect section, a second interconnect section, a second interlayer insulating film covering a surface side of the second interconnect section facing the first interconnect section, and a second electrode section in a second through-hole in the second interlayer insulating film and electrically connected to the second interconnect section. The first electrode section and the second electrode section are directly bonded to each other. The first electrode section has a larger coefficient of thermal expansion than that of the first interconnect section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.