Infrared detector improved via engineering of the effective mass of charge carriers
US12272718B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 1, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Apr 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/16
Abstract
A device for detecting infrared radiation, includes at least one pixel having an axis in a direction Z, the pixel comprising a first absorbent planar structure comprising at least one semiconductor layer. The composition of the materials used to produce the at least one layer of the first absorbent planar structure is chosen such that: the first absorbent planar structure has an effective valence band formed by a plurality of energy levels. Each energy level is occupied by one of: a first type of positive charge carrier, called heavy holes, having a first effective mass; or a second type of positive charge carrier, called light holes, having a second effective mass strictly less than the first effective mass. The maximum energy level of the effective valence band is occupied by light holes along the axis of the pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.