Dual embedded storage nodes and vertical transfer gates for pixels of global shutter image sensors
US12274099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | May 29, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/0231
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.