Modification of stress response and adhesion behavior of dielectric through tuning of mechanical properties
US12274107B2 · kind B2 · utility
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3References
14Claims
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Key dates
| Filing date | Jun 24, 2020 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Oct 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/151
Abstract
The disclosed subject matter relates to a dielectric stack that includes a dielectric layer formed from a dielectric material that includes one or more constituent components each having a Tg value of 70° C. or lower and that is annealed at a temperature exceeding the highest Tg value of the one or more constituent components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.