Thin film transistor comprising a low lead content halide anion perovskite and display device including the thin film transistor
US12274108B2 · kind B2 · utility
0Cited by
0References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 30, 2021 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Jun 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/30
Abstract
A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB(1-u)C(u)[X(1-v)Y(v)]3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.