Methods of making semiconductor perovskite layers and compositions thereof
US12274109B2 · kind B2 · utility
0Cited by
47References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | May 24, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MAn1FAn2Csn3PbX3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1+n2+n3 may equal 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.