Hole transport material, quantum dot light-emitting device and manufacturing method thereof, and display apparatus
US12274113B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Dec 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/321
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present disclosure provides a hole transport material, a quantum dot light-emitting device and a manufacturing method thereof and a display apparatus. A surface of a quantum dot is modified with a ligand capable of being cross-linked with a modifying group of the hole transport material, that is, a cross-linking group in the ligand, so that when the quantum dot light-emitting device is manufactured, the cross-linking group of the quantum dot material is cross-linked with the modifying group of the hole transport material under a set external stimulus, so that the coupling degree between a light-emitting layer and a hole transport layer is increased and an interface structure between the light-emitting layer and the hole transport layer is weakened, thus facilitating carrier transmission. Under the condition of not sacrificing the transmission rate of electrons, hole injection is increased to the greatest extent, so as to regulate the injection balance of carriers, improve the carrier recombination rate of the quantum dot light-emitting device, and further improve the luminous efficiency and other device performances of the quantum dot light-emitting device. Moreover, the increa…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.